HMC-ALH508

Overview

The HMC-ALH508 is a three-stage GaAs HEMT MMIC Low Noise Amplifier (LNA) designed for operation between 71 and 86 GHz. It features 13 dB of small signal gain, a 4.5 dB noise figure, and +7 dBm output power at 1 dB compression. The device operates on a supply voltage of 2.4V with an operating current of 30mA. It supports a temperature range from -55°C to +85°C.

Feature Summary

• Three-stage GaAs HEMT MMIC architecture
• High gain performance in Ka-band frequencies
• Low noise figure specification
• Monolithic microwave integrated circuit design

Applications

• RF communication systems
• Microwave applications
• GPS receiver front ends

Procurement Notes

Verify the specific package type when ordering, as this component is available as a die. Confirm compatibility with existing RF layouts and biasing circuits. Ensure thermal management meets the specified operating temperature range. Check for moisture sensitivity handling requirements during assembly. Validate that the supplier provides authentic Analog Devices components.

Selection Notes

Select this LNA for high-frequency applications requiring low noise and moderate gain. Consider the 71-86 GHz operational range against system requirements. Evaluate the 4.5 dB noise figure impact on overall system sensitivity. Assess the +7 dBm output power capability for subsequent stage driving. Verify supply voltage compatibility with the 2.4V requirement.

Part Context

This component belongs to Analog Devices' portfolio of high-frequency RF amplifiers. It utilizes GaAs HEMT technology for superior performance at millimeter-wave frequencies. The monolithic design integrates multiple stages into a compact form factor suitable for space-constrained RF modules.

Replacement Considerations

No direct public substitute part numbers are confirmed for this specific model.