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Product Detailed Parameters
- Description:IC RF AMP GPS 71GHZ-86GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Bulk,Tray
- Frequency:71GHz ~ 86GHz
- P1dB:7dBm
- Gain:14dB
- Noise Figure:5dB
- RF Type:General Purpose
- Voltage - Supply:2V
- Current - Supply:50mA
- Test Frequency:71GHz ~ 86GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-ALH509 is a three-stage GaAs HEMT MMIC Low Noise Amplifier operating between 71 and 86 GHz. It features 14 dB of small signal gain, a noise figure of 5 dB, and a P1dB compression point of +7 dBm. The device operates on a single 2 V supply with a current draw of 50 mA. Input and output are matched to 50 Ω. The component is available in a QFN-16 package or as a bare die measuring 3.20 x 1.60 x 0.1 mm. It supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Three-stage GaAs HEMT MMIC architecture for low noise amplification
- 50 Ω input and output impedance matching
- Single positive voltage supply operation
Applications
- Millimeter-wave communication systems
- Satellite communication receivers
- Test and measurement equipment
Procurement Notes
Verify the specific package variant required, as the part is available in both QFN-16 surface mount and bare die formats. Confirm that the design accommodates the specified 2V supply and thermal requirements for the -40°C to +85°C range. Note that the lifecycle status is listed as obsolete; ensure long-term availability needs are addressed through alternative sourcing or stockpiling strategies before finalizing the design.
Selection Notes
Select this component for applications requiring high-frequency performance in the 71-86 GHz band with moderate gain and low noise characteristics. The choice depends on whether a packaged solution (QFN-16) or bare die integration is preferred for the PCB layout. Ensure the system can provide the necessary 2V supply and manage the power dissipation of approximately 339 mW. Consider the physical dimensions if using the bare die version for space-constrained designs.
Part Context
The HMC-ALH509 belongs to Analog Devices' portfolio of millimeter-wave monolithic microwave integrated circuits. It utilizes GaAs HEMT technology to achieve performance suitable for high-frequency RF front-ends. This specific model is designed to provide reliable amplification in the E-band spectrum, supporting applications where size and weight are critical factors alongside signal integrity.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The lifecycle status is listed as obsolete. Designers should consult official manufacturer channels for potential end-of-life notifications or recommended alternatives within the same product family.
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