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Product Detailed Parameters
- Description:IC RF AMP VSAT 17GHZ-30GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:17GHz ~ 30GHz
- P1dB:22dBm
- Gain:17dB
- Noise Figure:-
- RF Type:VSAT, DBS
- Voltage - Supply:4.5V
- Current - Supply:400mA
- Test Frequency:24GHz ~ 27GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-APH196-SX is a two-stage GaAs HEMT MMIC medium power amplifier manufactured by Analog Devices Inc. It operates within the 17 GHz to 30 GHz frequency range, with performance testing typically conducted at 24 GHz to 27 GHz. The device provides approximately 20 dB of gain at 20 GHz. Packaged as a bare die for surface-mount applications, it is designed for high-frequency RF signal chain integration.
Feature Summary
- Two-stage GaAs HEMT MMIC architecture for medium power amplification
- Broadband operation across the 17 GHz to 30 GHz spectrum
- High gain performance of 20 dB at 20 GHz center frequency
Applications
- VSAT (Very Small Aperture Terminal) uplink and downlink systems
- Point-to-point microwave communication links
- Satellite communication ground stations
Procurement Notes
Verify component authenticity through authorized Analog Devices channels or certified distributors. Confirm that the received unit matches the specific HMC-APH196-SX designation, as availability may be limited due to lifecycle status. Ensure handling procedures comply with electrostatic discharge (ESD) protocols required for bare die components.
Selection Notes
Select this component when designing circuits requiring broadband amplification in the Ka-band range. Evaluate thermal management requirements suitable for bare die mounting on substrates. Consider system noise figure contributions and impedance matching networks necessary to achieve the specified 20 dB gain at 20 GHz within the target application environment.
Part Context
This part belongs to the HMC-APH series of medium power amplifiers from Analog Devices. It utilizes GaAs HEMT technology optimized for high-frequency performance. The -SX suffix indicates the specific die configuration intended for custom packaging or substrate integration in advanced RF modules.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Analog Devices technical support for current alternatives if this component is obsolete or unavailable.
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