HMC-APH473-2

RF Amplifiers Overview

The HMC-APH473-2 is a two-stage GaAs HEMT MMIC power amplifier designed for operation between 37 and 40 GHz. It delivers 15 dB of gain with an output power of +28 dBm at the 1 dB compression point when powered by a +5V supply. The device requires an operating supply current of 1.08 A. This component serves as a high-performance solution for millimeter-wave applications requiring significant amplification within the specified frequency band.

RF Amplifiers Feature Summary

• Two-stage GaAs HEMT MMIC architecture
• High gain performance of 15 dB
• Operates on a +5V supply voltage

RF Amplifiers Applications

• VSAT systems
• Point-to-point microwave links
• Millimeter-wave test equipment

RF Amplifiers Procurement Notes

Verify the specific suffix against official Analog Devices documentation to confirm pinout, biasing requirements, and thermal characteristics. Ensure that the selected variant matches the intended application's frequency range and power output specifications. Cross-reference datasheet revisions to confirm compatibility with existing design implementations.

RF Amplifiers Selection Notes

Select this component for designs requiring high gain and output power in the 37-40 GHz range. Consider the 1.08 A supply current requirement when designing power distribution networks. Evaluate thermal management strategies suitable for bare die or chip-level integration to maintain performance stability.

RF Amplifiers Part Context

This part belongs to the Hittite Microwave (now Analog Devices) portfolio of RF and microwave integrated circuits. It is specifically engineered for high-frequency communication systems where compact size and high linearity are critical. The technology leverages GaAs HEMT processes to achieve efficient power amplification at millimeter-wave frequencies.

RF Amplifiers Replacement Considerations

HMC-APH473