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Product Detailed Parameters
- Description:IC RF AMP GPS 0HZ-35GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:0Hz ~ 35GHz
- P1dB:21dBm
- Gain:15dB
- Noise Figure:-
- RF Type:General Purpose
- Voltage - Supply:5V
- Current - Supply:200mA
- Test Frequency:5GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-AUH249 is a GaAs MMIC HEMT distributed driver amplifier die from Analog Devices Inc. It operates between DC and 35 GHz, providing a typical 3 dB bandwidth of 35 GHz. The device delivers a gain of 15 dB and an output P1dB of 21 dBm. Designed for high-frequency applications, it functions as a modulator driver amplifier within the W-band spectrum.
Feature Summary
- Utilizes GaAs HEMT technology for high-frequency performance
- Distributed amplifier architecture for wideband operation
- Die-level component for custom integration
Applications
- W-band communication systems
- Modulator driver circuits
- High-frequency test equipment
Procurement Notes
Verify part authenticity through authorized Analog Devices channels or certified distributors. Confirm package type and die specifications match design requirements. Check current availability status as distribution may vary. Ensure handling procedures comply with ESD standards for bare die components.
Selection Notes
Select this component for applications requiring wideband amplification up to 35 GHz. Consider the 15 dB gain and 21 dBm P1dB output power against system linearity needs. Evaluate thermal management and substrate compatibility for die mounting. Compare against alternative MMICs if specific frequency or power constraints exist.
Part Context
This component belongs to Analog Devices' RF amplifier portfolio, specifically designed for millimeter-wave applications. It serves as a driver stage in signal chains where wide bandwidth and moderate power output are critical. The die format allows for flexible integration into custom RF modules or subsystems.
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