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Product Detailed Parameters
- Description:IC RF AMP VSAT 17.5GHZ-41GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Bulk
- Frequency:17.5GHz ~ 41GHz
- P1dB:20dBm
- Gain:21dB
- Noise Figure:-
- RF Type:VSAT
- Voltage - Supply:5V
- Current - Supply:295mA
- Test Frequency:17.5GHz ~ 41GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-AUH256 is a GaAs MMIC HEMT four-stage driver amplifier designed for the W-band frequency range of 17.5 to 41 GHz. It delivers a typical gain of 21 dB with a 1 dB compression point (P1dB) of 20 dBm and an output third-order intercept point (OIP3) of 27 dBm. The device operates on a single 5 V supply, drawing 295 mA. Key performance metrics include an input return loss of 8 dB. The component is available in a die package format, facilitating integration into multi-chip modules.
Feature Summary
- Four-stage GaAs HEMT architecture for high-frequency amplification
- Compact chip design suitable for multi-chip module integration
- Single positive voltage operation simplifying bias circuitry
Applications
- Point-to-point microwave radio links
- Satellite communication systems
- Electronic warfare subsystems
Procurement Notes
Verify the specific suffix designation, such as SX, against the required tape-and-reel or waffle pack configuration. Confirm that the procurement channel accepts bare die components, as standard surface-mount handling procedures do not apply. Ensure the supplier provides traceability documentation consistent with Analog Devices specifications for this semiconductor grade part.
Selection Notes
Select this component when designing circuits requiring high linearity and gain in the 17.5 to 41 GHz range. The die form factor necessitates careful thermal management and RF layout considerations within the host system. Evaluate the 5 V supply requirement against available power rails and ensure the 295 mA current draw fits within the system's power budget constraints.
Part Context
This part belongs to the HMC-AUH series of wideband driver amplifiers from Analog Devices. It utilizes Gallium Arsenide High Electron Mobility Transistor technology to achieve performance levels suitable for demanding wireless applications. The series focuses on providing robust signal amplification in millimeter-wave frequencies where traditional silicon solutions may lack efficiency.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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