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Product Detailed Parameters
- Description:IC RF AMP GPS 500MHZ-65GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:500MHz ~ 65GHz
- P1dB:-
- Gain:10dB
- Noise Figure:-
- RF Type:General Purpose
- Voltage - Supply:8V
- Current - Supply:60mA
- Test Frequency:-
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-AUH312 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die. It utilizes High Electron Mobility Transistor (HEMT) technology to operate across a frequency range of 500 MHz to 80 GHz. The device provides 10 dB of small-signal gain and supports a maximum output amplitude of 2.5 V peak-to-peak. Electrical specifications include an 8V supply voltage and a typical current consumption of 60mA. Designed as a bare die, it offers a 3 dB bandwidth extending to 80 GHz, ensuring consistent performance for ultra-wideband applications.
Feature Summary
- Ultra-wideband operation from 500 MHz to 80 GHz using GaAs HEMT technology
- Provides 10 dB small-signal gain with high linearity capabilities
- Supports maximum output amplitude of 2.5 V p-p for driver applications
- Low noise figure design optimized for signal integrity in broadband systems
Applications
- Broadband wireless infrastructure equipment
- Fiber optic communication systems
- Millimeter-wave radar test and measurement instruments
- Satellite communication ground stations
Procurement Notes
Verify the specific ordering suffix when purchasing, as Analog Devices may offer packaged or taped-and-reeled variants distinct from the bare die configuration. Confirm that the procurement channel sources genuine components directly from Analog Devices or authorized distributors to ensure authenticity. Check technical documentation for any recent revisions that might affect pinout compatibility or thermal characteristics before finalizing orders.
Selection Notes
Select this component for designs requiring extreme bandwidth up to 80 GHz with minimal noise degradation. Ensure the host PCB layout accommodates surface-mount die attachment methods and provides adequate thermal dissipation for the 60mA operating current. Evaluate system requirements against the 10 dB gain specification to determine if additional amplification stages are necessary for the target application signal levels.
Part Context
This part belongs to Analog Devices' HMC series of microwave integrated circuits, specifically designed for high-frequency RF and microwave applications. The AUH312 variant focuses on ultra-wideband performance, distinguishing itself from narrower bandwidth amplifiers within the portfolio. It serves as a critical active component for maintaining signal fidelity in next-generation communication and sensing technologies operating at millimeter-wave frequencies.
Replacement Considerations
Public confirmed substitute part numbers: HMC-AUH312-SX.
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