HMC-AUH318-SX

Overview

The HMC-AUH318-SX is a GaAs HEMT MMIC medium power amplifier operating between 71 and 76 GHz. It provides 24 dB gain with a P1dB of 17.5 dBm. The device requires a 4 V supply and draws 160 mA current. It features an input return loss of 7 dB and dissipates 634 mW. The component operates within a temperature range of -55°C to +85°C.

Feature Summary

• High dynamic range three-stage GaAs HEMT MMIC architecture
• Medium power amplification capability in the E-band spectrum
• Surface-mount die package configuration for integration

Applications

• Point-to-point microwave radio links
• Satellite communication uplink/downlink systems
• Millimeter-wave test and measurement equipment

Procurement Notes

Verify component status carefully as this part may be discontinued or subject to limited availability. Confirm that the die package format aligns with your board design capabilities, as it requires specialized mounting techniques distinct from standard surface-mount packages. Ensure thermal management strategies account for the specified power dissipation levels during operation.

Selection Notes

Select this component when high output power and gain are required at frequencies above 70 GHz. Consider the specific thermal requirements associated with the die form factor and the need for precise impedance matching networks suitable for millimeter-wave applications. Evaluate the supply chain stability given the potential end-of-life status of the product line.

Part Context

This model belongs to the HMC-AUH318 series of RF amplifiers manufactured by Analog Devices Inc. It represents a specialized solution for high-frequency applications where standard packaged amplifiers may not meet performance or size constraints. The series is designed for robust performance in demanding wireless communication environments.

Replacement Considerations

Public confirmed substitute part numbers: HMC-AUH318-DIE.