HMC-MDB218

RF Mixers Overview

The HMC-MDB218 is a sub-harmonic (x2) MMIC mixer manufactured using GaAs HBT Schottky diode technology. It operates within a radio frequency range of 54 GHz to 64 GHz and supports a maximum conversion loss of 14 dB. The device functions as an image reject mixer or single sideband upconverter. It features a chip package suitable for SMD/SMT installation, with an operating temperature range spanning from -55°C to +85°C.

RF Mixers Feature Summary

• Supports dual functionality as an image reject mixer or single sideband upconverter
• Utilizes GaAs HBT Schottky diode technology for passive MMIC operation
• Enables sub-harmonic pumping at x2 multiplication factor

RF Mixers Applications

• Image rejection mixing applications
• Single sideband upconversion systems
• Sub-harmonic mixer circuits in the 54-64 GHz band

RF Mixers Procurement Notes

Verify current availability status directly with Analog Devices or authorized distributors, as supply may be limited or restricted. Confirm RoHS compliance details and specific packaging requirements prior to ordering. Ensure that the intended application environment falls within the specified operational temperature range of -55°C to +85°C. Validate that the RF signal frequencies align strictly with the 54 GHz to 64 GHz specification to ensure proper device performance and reliability.

RF Mixers Selection Notes

Select this component when designing systems requiring passive sub-harmonic mixing in the millimeter-wave spectrum. The device is appropriate for applications needing image rejection or single sideband upconversion capabilities without active biasing. Consider the GaAs HBT Schottky diode construction for its specific noise and linearity characteristics. Ensure the design accommodates the required local oscillator frequency relationships inherent to sub-harmonic pumping schemes.

RF Mixers Part Context

This part belongs to the Analog Devices HMC-MDB series of microwave monolithic integrated circuits. It is categorized under wireless and RF integrated circuits, specifically focusing on high-frequency mixer solutions. The product utilizes advanced GaAs heterojunction bipolar transistor technology to achieve performance in the E-band spectrum.

RF Mixers Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.