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Product Detailed Parameters
- Description:IC RF AMP VSAT 0HZ-48GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:0Hz ~ 48GHz
- P1dB:22dBm
- Gain:11.5dB
- Noise Figure:8dB
- RF Type:VSAT
- Voltage - Supply:10V
- Current - Supply:150mA
- Test Frequency:36GHz ~ 48GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC1022ACHIPS is a GaAs pHEMT MMIC distributed power amplifier operating from DC to 48 GHz. It delivers 11.5 dB small signal gain and 0.25 W (25 dBm) output power at 1 dB gain compression. The device features a typical output third-order intercept point of 33 dBm and an input return loss of 17 dB. Powered by +10 V at 150 mA, it includes internal 50 Ω matching for easy integration. Operating temperatures range from -55°C to +85°C.
Feature Summary
- Distributed architecture provides stable gain and power performance across a wide frequency range up to 48 GHz.
- Internal 50 Ω input and output matching simplifies integration into multi-chip modules without external matching networks.
- High linearity characteristics with significant output third-order intercept point support complex modulation schemes.
- Robust thermal and electrical specifications allow operation in demanding environments including military and aerospace applications.
Applications
- Electronic Warfare systems
- Electronic Countermeasures equipment
- Radar transceivers
- Test and measurement instrumentation
Procurement Notes
Verify the specific suffix 'CHIPS' against the manufacturer's official datasheet to confirm the die package type and handling requirements. Ensure ESD protection protocols are strictly followed during assembly due to the bare die format. Cross-reference the current lifecycle status with Analog Devices directly, as distribution channels may list varying availability or obsolescence statuses that do not reflect factory production reality.
Selection Notes
Select this component when designing systems requiring broadband amplification from DC through millimeter-wave frequencies. The internal 50 Ω matching eliminates the need for external RF components, reducing board space and complexity. Consider the +10 V supply requirement and 150 mA current draw for power budgeting. Verify that the thermal dissipation capabilities meet the system's heat management constraints for the intended operating temperature range.
Part Context
This part belongs to the HMC1022A series of GaAs pHEMT MMICs designed for high-performance RF applications. It represents a monolithic solution for wideband power amplification, distinct from discrete transistor assemblies. The technology leverages advanced semiconductor processes to achieve high gain and linearity in a compact form factor suitable for modern electronic warfare and radar architectures.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult Analog Devices technical support for direct replacements or next-generation alternatives within the same product family.
FAQ
What is the maximum operating frequency of the HMC1022ACHIPS?
The amplifier operates effectively from DC up to 48 GHz.
Does the HMC1022ACHIPS require external matching networks?
No, the input and output are internally matched to 50 Ω, facilitating direct integration.
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