HMC1086F10

Overview

The HMC1086F10 is a 25W Gallium Nitride (GaN) MMIC power amplifier operating between 2 and 6 GHz. It provides typical small signal gain of 23 dB with +44.5 dBm saturated output power. The device operates at 28 V supply voltage with 850 mA current consumption. Key electrical parameters include 15 dB input return loss, 43.5 dBm OIP3, and 63.6 W power dissipation capability. It functions within a temperature range of -55°C to +85°C.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high power density
• Provides wideband operation across the 2 to 6 GHz frequency range
• Delivers high saturated output power of 25 watts
• Features non-hermetic air cavity construction

Applications

• Military electronic warfare systems
• Ground-based radar transmitters
• Communications infrastructure amplification

Procurement Notes

Verify package compatibility as this component uses a 10-lead flange mount design and is not surface mountable. Confirm that the non-hermetic air cavity construction meets environmental requirements for the intended deployment. Ensure thermal management solutions support the specified 63.6 W power dissipation rating during operation.

Selection Notes

Select this part when high output power is required in the 2-6 GHz band. The GaN technology offers superior performance compared to traditional silicon devices. Consider the flange mount package constraints for PCB layout and mechanical integration. Verify that the 28V supply requirement aligns with system power architecture.

Part Context

This component belongs to the HMC1086 series of high-power RF amplifiers from Analog Devices. It represents a specific variant optimized for flange mounting applications. The series utilizes advanced GaN MMIC processes to achieve high efficiency and linearity in demanding RF environments.

Replacement Considerations

HMC1086-DIE serves as the die-level alternative for custom packaging solutions.