HMC1087F10TR

Overview

The HMC1087F10TR is a Gallium Nitride (GaN) MMIC power amplifier designed for radar applications, operating across a frequency range of 2 GHz to 20 GHz. It delivers a saturated output power of +39 dBm and provides approximately 11 dB of small-signal gain. The device functions with a supply voltage of 28 V and draws an operating current of 850 mA. Key performance metrics include an input return loss of 12 dB and a third-order intercept point (OIP3) of 43.5 dBm. It is housed in a 10-lead surface mount package.

Feature Summary

• Utilizes robust Gallium Nitride (GaN) technology for high-power RF amplification
• Engineered specifically for demanding radar system architectures
• Provides wideband operation covering the 2 GHz to 20 GHz spectrum

Applications

• Radar systems
• Electronic warfare equipment
• Military communication subsystems

Procurement Notes

Verify that the specific suffix 'TR' denotes the tape-and-reel packaging variant rather than the bulk flange-mount version. Confirm compatibility with the intended PCB footprint and thermal management requirements for the 10-lead CLCC package. Ensure the procurement channel supplies genuine Analog Devices components to guarantee specified RF performance and reliability standards are met.

Selection Notes

Select this component when a wide bandwidth from 2 to 20 GHz is required alongside high output power capabilities. The GaN technology offers superior power density compared to traditional semiconductor options. Consider the surface mount form factor for integration into compact radar modules where space constraints limit the use of larger flange-mounted alternatives.

Part Context

This part belongs to the HMC1087 series of distributed power amplifiers manufactured by Analog Devices. While the base model HMC1087F10 typically utilizes a non-hermetic air cavity flange mount package, the HMC1087F10TR variant specifically adapts this technology for surface mount integration. This distinction allows designers to choose between mounting styles based on assembly processes without altering the core RF characteristics.

Replacement Considerations

Public confirmed substitute part numbers were not identified in the provided documentation.