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Product Detailed Parameters
- Description:IC AMP GPS 10MHZ-1.1GHZ 32LFCSP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Strip
- Frequency:10MHz ~ 1.1GHz
- P1dB:-
- Gain:18dB
- Noise Figure:5dB
- RF Type:General Purpose
- Voltage - Supply:24V ~ 30V
- Current - Supply:100mA
- Test Frequency:800MHz ~ 1.1GHz
- Mounting Type:Surface Mount
- Package / Case:32-LFQFN Exposed Pad, CSP
- Supplier Device Package:32-LFCSP-CAV (5x5)
- Grade:-
- Qualification:-
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Overview
The HMC1099PM5E is a gallium nitride (GaN) broadband power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 10 MHz to 1.1 GHz, delivering 10 W output power with up to 69% power added efficiency (PAE). The device features a typical gain of 18.5 dB and a noise figure of 5 dB. It requires a 28 V supply voltage with a current draw of 100 mA. Key performance metrics include an OIP3 of 47 dBm and an input return loss of 12 dB. The component is housed in an LFCSP-32 package, supports surface mount installation, and functions across a temperature range of -40°C to +85°C.
Feature Summary
- Utilizes GaN technology for high-efficiency broadband amplification
- Delivers consistent 10 W output across wide instantaneous bandwidth
- Optimized for pulse applications with high linearity
- Integrated thermal management via LFCSP-32 package
Applications
- Pulse radar systems
- Electronic warfare equipment
- Broadband communication infrastructure
- Test and measurement instrumentation
Procurement Notes
Verify the specific manufacturing lot date code against project requirements due to potential limited availability status. Confirm that the LFCSP-32 package orientation matches the PCB footprint design. Ensure that the 28 V supply regulation meets the 100 mA current specification without ripple exceeding datasheet limits. Validate that the operating environment remains within the -40°C to +85°C range to maintain specified PAE and gain stability. Check for any recent product change notifications regarding pinout or electrical characteristics.
Selection Notes
Select this component when a single-chip solution is required for high-power broadband applications between 10 MHz and 1.1 GHz. The GaN technology offers superior efficiency compared to traditional silicon LDMOS alternatives. Consider the LFCSP-32 package size constraints during layout design. Evaluate the 18.5 dB gain requirement against system noise budget needs. Ensure that the 47 dBm OIP3 meets linearity specifications for complex modulation schemes if applicable.
Part Context
The HMC1099PM5E belongs to the HMC1099 series of GaN power amplifiers from Analog Devices. This series targets applications requiring high power density and wide bandwidth in a compact form factor. The PM5E suffix indicates the specific LFCSP-32 package variant designed for surface-mount assembly. It complements other HMC series components by providing integrated solutions for RF front-end modules.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Direct replacements require matching GaN technology, 10 W output capability, and LFCSP-32 packaging. Verify compatibility with existing bias networks and thermal interfaces before considering alternative vendors.
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