HMC1110-SX

Overview

The HMC1110-SX is a monolithic microwave integrated circuit (MMIC) designed as an x6 active broadband frequency multiplier for E-band applications. Fabricated using GaAs pHEMT technology, it operates within a frequency range of 71 GHz to 86 GHz. The device requires a +4 dBm input signal to deliver a typical output power of +13 dBm. It functions with a supply current of 175 mA and dissipates up to 1.55 W of power. The component supports an operating temperature range from -55°C to +85°C and is supplied in a die package format.

Feature Summary

• Active broadband frequency multiplication by a factor of six
• GaAs pHEMT technology construction for high-frequency performance
• Designed specifically for E-band point-to-point wireless applications

Applications

• E-band point-to-point wireless communication systems
• Millimeter-wave radar transmitters
• High-capacity backhaul links

Procurement Notes

Verify availability status directly with Analog Devices or authorized distributors, as the part may be subject to limited supply or factory special order constraints. Confirm that the specific die package variant matches system integration requirements. Ensure compliance with RoHS standards and check for any regional sales restrictions before placing orders. Validate technical specifications against the latest official datasheet to confirm operational parameters.

Selection Notes

Select this component when designing E-band systems requiring a compact, high-output frequency multiplier. The GaAs pHEMT process ensures reliable operation at millimeter-wave frequencies. Consider the thermal management requirements due to the 1.55 W power dissipation. Verify that the input drive level of +4 dBm aligns with the preceding stage capabilities. Evaluate the wide operating temperature range for environmental suitability.

Part Context

The HMC1110-SX belongs to the HMC1110G series of RF wireless miscellaneous components manufactured by Analog Devices Inc. It utilizes silicon-based or GaAs technologies depending on the specific variant, though this model is explicitly GaAs pHEMT. It serves as a critical building block in modern high-frequency signal chains, enabling efficient frequency conversion for next-generation wireless infrastructure.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Analog Devices application notes for potential cross-references or updated family members. Direct replacement requires matching the x6 multiplication ratio, E-band frequency range, and GaAs pHEMT technology characteristics.