HMC1114LP5DE

Overview

The HMC1114LP5DE is a gallium nitride (GaN) broadband driver power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 2.7 GHz to 3.2 GHz and delivers an output power of 10 W with greater than 50% power added efficiency. The device provides 35 dB of gain and features a typical third-order intercept point (OIP3) of 44 dBm. It requires a 28 V supply voltage with a current draw of 150 mA. Packaged in a 32-lead LFCSP, it supports operation from -40°C to +85°C.

Feature Summary

• Utilizes GaN technology for high linearity and efficiency
• Broadband performance across S-band frequencies
• High output IP3 for signal integrity

Applications

• Point-to-point microwave radio links
• Satellite communication ground stations
• Electronic warfare systems

Procurement Notes

Verify component authenticity through authorized channels due to limited availability status. Confirm RoHS compliance details and moisture sensitivity levels prior to handling. Ensure thermal management design aligns with the specified power dissipation requirements for reliable long-term operation in harsh environments.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the S-band. Compare against the HMC1114PM5E variant if a wider bandwidth up to 3.8 GHz is necessary. Evaluate thermal constraints carefully as the device dissipates significant power during operation.

Part Context

This part belongs to the HMC1114 series of GaN driver amplifiers designed for robust RF performance. It serves as a key building block for high-power transmitter chains where linearity and efficiency are critical. The LP5DE suffix indicates specific packaging and testing configurations distinct from other variants in the family.

Replacement Considerations

The HMC1114PM5E is a confirmed substitute offering extended bandwidth up to 3.8 GHz. Verify pin compatibility and thermal characteristics before implementation.