HMC1114PM5ETR

HMC1114PM5ETR

$96.19
  • Description:IC RF AMP 32LFCSP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tape & Reel (TR)

SKU:30bd7b2d8d66 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IC RF AMP 32LFCSP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tape & Reel (TR)
  • Frequency:-
  • P1dB:-
  • Gain:-
  • Noise Figure:-
  • RF Type:-
  • Voltage - Supply:-
  • Current - Supply:-
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:32-LFQFN Exposed Pad, CSP
  • Supplier Device Package:32-LFCSP-CAV (5x5)
  • Grade:-
  • Qualification:-

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HMC1114PM5ETR

Overview

The HMC1114PM5ETR is a GaN broadband power amplifier from Analog Devices Inc., designed for operation within the 2.7 GHz to 3.8 GHz frequency range. It delivers high output performance, achieving up to 42 dBm (10 W) at an input power of 18 dBm with a typical Power Added Efficiency (PAE) of 55%. The device features a small-signal gain of approximately 34.5 dB and operates on a 28 V supply with a quiescent current of 150 mA. Packaged in a 32-lead LFCSP_CAV (5 mm x 5 mm) surface-mount format, it supports both pulse and continuous wave applications.

Feature Summary

  • Utilizes Gallium Nitride (GaN) technology for high power density and efficiency
  • Provides broadband coverage across the 2.7 GHz to 3.8 GHz spectrum
  • Achieves high output power of 42 dBm with 55% PAE at rated input
  • Features low small-signal gain flatness typically under 1 dB

Applications

  • Public mobile radio infrastructure
  • Wireless infrastructure power amplifier stages
  • Radar systems
  • Test and measurement equipment
  • General transmitter applications

Procurement Notes

Verify component authenticity through authorized Analog Devices channels or certified distributors. Confirm RoHS compliance status and lead finish specifications (Nickel Palladium Gold). Ensure handling procedures account for moisture sensitivity classification during storage and reflow soldering processes to maintain device integrity.

Selection Notes

Select this model when high linearity and efficiency are required in the S-band. The 28 V bias requirement must be supported by the system power design. Consider the 32-lead LFCSP package for thermal management and PCB space constraints. Evaluate thermal dissipation capabilities given the 24 W power dissipation rating for reliable long-term operation.

Part Context

This part belongs to the HMC1114 series of GaN power amplifiers. It shares the same core die and electrical characteristics as the HMC1114PM5E, differing primarily in packaging configuration. The PM5ETR variant utilizes a tape-and-reel format suitable for automated surface-mount assembly, whereas the PM5E is available in cut-tape quantities.

Replacement Considerations

The HMC1114PM5E serves as the direct non-reel equivalent with identical electrical specifications. No alternative cross-model replacements are officially documented for this specific part number.

HMC1114PM5ETRHMC1114PM5ETR
$96.19
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