HMC232C8TR

RF Switches Overview

The HMC232C8TR is a broadband high isolation non-reflective GaAs MESFET SPDT switch in a non-hermetic surface mount ceramic package. It covers DC to 8 GHz with an insertion loss of 1.6 dB and typical off-isolation of 43 dB. Operating temperature ranges from -40°C to +85°C. The component utilizes SMD/SMT installation in a C8 package.

RF Switches Feature Summary

• Broadband high isolation non-reflective GaAs MESFET technology
• SPDT configuration for signal routing
• Non-hermetic surface mount ceramic packaging

RF Switches Applications

• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation

RF Switches Procurement Notes

Verify current availability status as the component lifecycle is listed as discontinued or limited supply. Confirm datasheet version compatibility for design-in. Check RoHS compliance details through official documentation. Ensure sourcing channels are authorized to prevent counterfeit components. Validate package marking against official specifications.

RF Switches Selection Notes

Select this component for applications requiring DC to 8 GHz switching with high isolation. Consider the C8 ceramic package for thermal stability. Evaluate insertion loss and isolation requirements against system specifications. Verify control voltage compatibility with existing logic levels. Assess physical footprint constraints within the PCB layout.

RF Switches Part Context

Part of the HMC232G series of RF switches. Manufactured by Analog Devices Inc. using GaAs MESFET technology. Designed for wireless and RF integrated circuit applications. Provides reliable signal path control in microwave systems.

RF Switches Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for end-of-life alternatives.