HMC311LP3ETR

Overview

The HMC311LP3ETR is a GaAs InGaP HBT gain block MMIC amplifier from Analog Devices, designed for surface-mount applications. It operates across a frequency range of DC to 6 GHz and is housed in a compact 16-lead QFN (3x3 mm) package. The device provides a typical gain of 14 dB with a noise figure of 4.5 dB. It requires a single 5 V supply and draws approximately 74 mA of current. Key performance metrics include a P1dB compression point of 13 dBm and an OIP3 of 32 dBm. The component supports input return loss of 15 dB and dissipates up to 339 mW of power.

Feature Summary

• Utilizes GaAs InGaP Heterojunction Bipolar Transistor technology for high-performance RF amplification.
• Provides cascadable 50 Ohm gain stage functionality suitable for multi-stage designs.
• Capable of driving local oscillator inputs of mixers with significant output power capabilities.

Applications

• General purpose RF signal chain gain stages
• Driving local oscillators in mixer circuits
• Cascadable amplifier modules in wireless systems

Procurement Notes

Verify component status carefully as the HMC311LP3ETR is officially listed as obsolete by Analog Devices. Production has ceased, and availability is limited to existing stock or third-party distributors. Confirm end-of-life notices and product change notifications prior to integration. Ensure that any sourced units match the original datasheet specifications and packaging requirements to maintain design integrity.

Selection Notes

Select this component when a wideband DC-to-6 GHz gain block is required in a small form factor. The InGaP HBT technology offers a balance of low noise and moderate linearity. Consider the 16-QFN package constraints for thermal management and PCB layout. Evaluate the 5V supply requirement against system power budgets. Assess the trade-off between the 14 dB gain and the 4.5 dB noise figure for the specific application sensitivity needs.

Part Context

The HMC311 series represents Analog Devices' lineup of broadband MMIC amplifiers. The LP3 suffix indicates the lead-free QFN package variant. This specific model is part of the broader family of InGaP HBT devices designed for cost-effective, high-volume RF applications. It complements other components in the signal chain such as mixers and switches within the same manufacturer ecosystem.

Replacement Considerations

Analog Devices lists alternative package types or substitute part numbers for this obsolete component. Consult official documentation for direct replacements or pin-compatible alternatives that meet the DC-6 GHz specification and QFN footprint requirements.