HMC311SC70TR

Overview

The HMC311SC70TR is a monolithic microwave integrated circuit (MMIC) gain block amplifier manufactured by Analog Devices Inc. utilizing InGaP HBT technology. It operates from DC to 8 GHz and is housed in an SC-70-6 surface-mount package. Key electrical specifications include a typical gain of 15 dB, a noise figure of 5 dB, and a P1dB compression point of 15 dBm. The device requires a 5 V supply with a current draw of 55 mA, resulting in a power dissipation of 340 mW. It features an OIP3 of 30 dBm and an input return loss of 15 dB, functioning as a single-channel RF amplifier suitable for wireless applications.

Feature Summary

• Utilizes InGaP HBT technology for high-performance amplification across a wide frequency range.
• Provides consistent gain and low noise characteristics within a compact surface-mount footprint.
• Designed for linear operation with defined compression points and third-order intercept metrics.

Applications

• Wireless Local Area Network (WLAN) systems
• Point-to-point radio links
• Broadband communication infrastructure

Procurement Notes

Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest documentation before ordering. Confirm that the SC-70-6 package dimensions match your PCB layout constraints. Ensure compatibility with the required 5 V supply voltage and thermal management strategies for the specified power dissipation levels during integration.

Selection Notes

Select this component when a DC-to-8 GHz gain block is required in a minimal footprint. Consider the 15 dB gain and 5 dB noise figure for signal chain requirements. Evaluate the 340 mW power dissipation against available board space and cooling capabilities. Compare performance metrics against alternative MMICs if higher linearity or lower noise is critical for the specific application design.

Part Context

The HMC311 series represents a family of InGaP HBT MMIC amplifiers designed for broadband wireless applications. The SC70 variant specifically targets cost-sensitive and space-constrained designs while maintaining performance comparable to larger packages. This part integrates biasing and matching networks on-chip to simplify system-level implementation for RF engineers developing compact transceiver modules.

Replacement Considerations

Check for direct pin-compatible alternatives such as the HMC311SC70E or HMC311ASC70 if different packaging or lot variations are needed. Verify that any substitute maintains the same SC-70-6 outline and electrical parameters including gain, noise figure, and supply voltage requirements to ensure seamless integration without redesign.

FAQ

What is the operating frequency range of the HMC311SC70TR?

The device operates from DC to 8 GHz.

What type of semiconductor technology is used in this amplifier?

It utilizes InGaP HBT (Indium Phosphide Gallium Arsenide Heterojunction Bipolar Transistor) technology.

What is the typical noise figure for this component?

The typical noise figure is 5 dB.