HMC326MS8GE

Overview

The HMC326MS8GE is a GaAs InGaP HBT MMIC driver amplifier designed for operation between 3.0 and 4.5 GHz. It delivers 21 dB of gain and +26 dBm saturated output power from a +5V supply. The device features greater than 40% Power Added Efficiency (PAE) and an Output IP3 of +36 dBm. Packaged in an MSOP-8G surface mount format with an exposed pad, it includes power-down capability to conserve current when inactive.

Feature Summary

• High efficiency GaAs InGaP HBT technology providing over 40% PAE
• Integrated power-down mode for reduced current consumption
• Optimized internal matching for broadband gain and return loss

Applications

• Microwave Radio systems
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier

Procurement Notes

Verify component status as the HMC series has been subject to discontinuance notices from Analog Devices following the acquisition of Hittite Microwave products. Confirm availability through authorized distributors or check specific EOL notifications for this part number before design-in. Ensure the ordering suffix matches the required RoHS compliance and package variant.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 3.0 to 4.5 GHz range. The +26 dBm Psat and +36 dBm OIP3 make it suitable for driving subsequent stages in transmitter chains. Consider the MSOP-8G package for thermal management via the exposed pad and space-constrained PCB layouts.

Part Context

Part of the HMC326 family of driver amplifiers manufactured by Analog Devices (formerly Hittite). This series utilizes GaAs InGaP HBT technology to balance gain, power, and efficiency. The MS8G suffix indicates the specific 8-lead Mini Small Outline Package with an exposed base pad for enhanced RF and thermal performance.

Replacement Considerations

• HMC326MS8G

FAQ

Does the HMC326MS8GE support power-down functionality?

Yes, the amplifier includes a power-down capability to conserve current consumption when the device is not in use.

What is the typical Power Added Efficiency (PAE) of this device?

Internal circuit matching was optimized to provide greater than 40% PAE.