HMC327MS8GE

Overview

The HMC327MS8GE is a GaAs InGaP HBT MMIC power amplifier designed for the 3 GHz to 4 GHz frequency range. It delivers a gain of 21 dB and an output P1dB compression point of 27 dBm, equivalent to approximately 0.5 watts. The device operates with a quiescent supply current typical for its class and is housed in an 8-lead MSOP surface-mount package. This component is classified as obsolete by the manufacturer.

Feature Summary

• Utilizes GaAs InGaP HBT technology for high-power performance
• Provides 21 dB gain within the 3 to 4 GHz band
• Achieves 27 dBm output power at 1 dB compression

Applications

• Point-to-point microwave radio links
• Base station transmitter modules
• Test and measurement equipment

Procurement Notes

Verify obsolescence status directly with Analog Devices or authorized distributors before design finalization. Confirm that the 8-MSOP footprint matches your PCB layout constraints. Request official replacement recommendations from the manufacturer to ensure long-term supply chain stability for production runs.

Selection Notes

Select this component only if the 3-4 GHz band aligns with system requirements and the 27 dBm output power meets link budget needs. Consider thermal management due to power dissipation characteristics. Evaluate alternative active devices if continuous production volume is required, given the obsolete status.

Part Context

This part belongs to the Hittite Microwave (HMC) product line acquired by Analog Devices. It represents a discrete MMIC solution for RF power amplification, distinct from integrated transceivers. The MS8G package facilitates surface-mount assembly in compact wireless infrastructure designs.

Replacement Considerations

Official substitutes include HMC327MS8G. Consult Analog Devices for current active replacements suitable for 3-4 GHz power amplification applications.