HMC373LP3ETR

HMC373LP3ETR

$18.53
  • Description:IC AMP CDMA 700MHZ-1GHZ 16LFCSP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1ebb483d6ff0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC AMP CDMA 700MHZ-1GHZ 16LFCSP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Frequency:700MHz ~ 1GHz
  • P1dB:21dBm
  • Gain:14dB
  • Noise Figure:1dB
  • RF Type:CDMA, GSM
  • Voltage - Supply:5V
  • Current - Supply:90mA
  • Test Frequency:1GHz
  • Mounting Type:Surface Mount
  • Package / Case:16-VFQFN Exposed Pad, CSP
  • Supplier Device Package:16-LFCSP (3x3)
  • Grade:-
  • Qualification:-

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HMC373LP3ETR

Overview

The HMC373LP3ETR is a GaAs PHEMT MMIC low-noise amplifier designed for operation within the 0.7 to 1.0 GHz frequency range. It features an integrated bypass mode, allowing for flexible circuit configuration and power management. The component is housed in a compact 16-lead LFCSP (3x3 mm) surface-mount package with an exposed pad for thermal dissipation. This device is optimized for applications requiring high linearity and low noise figures in the cellular band spectrum.

Feature Summary

  • Integrated bypass mode for signal path control
  • GaAs PHEMT technology for high performance
  • Compact 16-lead LFCSP surface-mount packaging

Applications

  • CDMA base station front ends
  • GSM receiver chains
  • Wireless infrastructure RF modules

Procurement Notes

Verify the specific suffix 'ETR' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official Analog Devices documentation prior to integration. Ensure ESD handling protocols are followed due to the sensitive GaAs MMIC construction. Cross-reference the exact part number with current manufacturer lifecycle notices to confirm availability and production status.

Selection Notes

Select this component for designs operating specifically between 700 MHz and 1 GHz where low noise figure is critical. The integrated bypass feature simplifies biasing and switching logic compared to external solutions. Consider the 3x3 mm footprint constraints during PCB layout. Evaluate thermal requirements based on the exposed pad design for adequate heat dissipation in dense assemblies.

Part Context

This part belongs to the HMC373 series of low-noise amplifiers from Analog Devices. It utilizes Gallium Arsenide Pseudomorphic High Electron Mobility Transistor (PHEMT) technology. The series is engineered for robust performance in wireless communication systems, offering consistent gain and noise characteristics across the specified bandwidth.

FAQ

What is the primary function of the bypass mode?

The bypass mode allows the amplifier to be disabled or routed around, providing flexibility in system design for power saving or signal routing.

What technology is used in the HMC373LP3ETR?

It uses GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) MMIC technology.

HMC373LP3ETRHMC373LP3ETR
$18.53
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