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Product Detailed Parameters
- Description:IC RF AMP VSAT 0HZ-10GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:0Hz ~ 10GHz
- P1dB:13dBm
- Gain:15dB
- Noise Figure:4.5dB
- RF Type:VSAT
- Voltage - Supply:5V
- Current - Supply:50mA
- Test Frequency:3GHz ~ 7GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
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Overview
The HMC405-SX is an InGaP HBT gain block MMIC amplifier from Analog Devices Inc., designed for operation from DC to 10 GHz. It provides a typical gain of 16 dB and an output IP3 of +32 dBm. The device requires a +5V supply voltage with a current consumption of 50 mA. Packaged as a bare die, it utilizes a Darlington feedback pair configuration to achieve its performance characteristics.
Feature Summary
- Utilizes InGaP HBT technology for high-performance amplification
- Features Darlington feedback pair configuration for stability
- Operates as a gain block MMIC amplifier
Applications
- VSAT systems
- Point-to-point microwave links
- Test and measurement equipment
Procurement Notes
Verify the specific suffix 'SX' indicates the bare die package format when sourcing. Confirm that the component is supplied as a die rather than a packaged IC. Ensure compatibility with flip-chip or wire-bond assembly processes suitable for bare die RF components. Check for any specific handling requirements related to the semiconductor substrate.
Selection Notes
Select this component for applications requiring wideband amplification up to 10 GHz with high linearity. The +32 dBm output IP3 makes it suitable for linear signal processing tasks. Consider the 50 mA current draw at +5V for power budget calculations. The bare die form factor requires careful PCB layout and thermal management strategies during integration.
Part Context
This part belongs to the HMC405 family of InGaP HBT gain block amplifiers. The '-SX' suffix typically denotes the specific die configuration offered by Analog Devices. These amplifiers are engineered for robust performance in microwave frequency ranges, leveraging heterojunction bipolar transistor technology for superior noise and linearity figures compared to older GaAs technologies.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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