HMC407MS8GE

HMC407MS8GE

$15.66
  • Description:IC RF AMP GPS 5GHZ-7GHZ 8MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Strip

SKU:f8d191db8421 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC RF AMP GPS 5GHZ-7GHZ 8MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Strip
  • Frequency:5GHz ~ 7GHz
  • P1dB:25dBm
  • Gain:15dB
  • Noise Figure:5.5dB
  • RF Type:General Purpose
  • Voltage - Supply:5V
  • Current - Supply:230mA
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package:8-MSOP-EP

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HMC407MS8GE

Overview

The HMC407MS8GE is a high-efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier designed for operation between 5 GHz and 7 GHz. It features a gain of 15 dB, a noise figure of 5.5 dB, and a P1dB compression point of 25 dBm. The device operates on a 5 V supply with a current draw of 230 mA. Key performance metrics include an OIP3 of 37 dBm and an input return loss of 12 dB. It supports a maximum power dissipation of 2 W and functions within a temperature range of -40°C to +85°C.

Feature Summary

  • Utilizes GaAs InGaP HBT technology for high efficiency in the 5-7 GHz band
  • Provides 15 dB gain with low noise figure characteristics
  • Delivers 25 dBm output power at 1 dB compression
  • Integrated in an 8-MSOP surface-mount package

Applications

  • Point-to-point microwave radio links
  • Wireless local loop systems
  • Broadband wireless access infrastructure

Procurement Notes

The HMC407MS8GE is officially listed as an End-of-Life (EOL) product by Analog Devices Inc. Procurement availability is restricted, and distributors may not stock this item. Verify discontinuation status and lifecycle notifications directly with authorized suppliers before design finalization. Alternative sourcing strategies or replacement components should be evaluated immediately due to the obsolete status.

Selection Notes

Select the HMC407MS8GE for applications requiring a compact, high-efficiency power solution in the 5-7 GHz frequency range. Ensure the design accommodates the 5 V supply voltage and 230 mA current consumption. Consider the thermal management requirements given the 2 W power dissipation capability. Verify that the 8-MSOP package footprint aligns with the PCB layout constraints and that the operating temperature range meets environmental specifications.

Part Context

This component belongs to the HMC407 series of monolithic microwave integrated circuits (MMICs). It is manufactured using GaAs InGaP HBT technology, which distinguishes it from standard silicon-based amplifiers. The series is designed for general-purpose RF applications, offering a balance of gain, linearity, and efficiency suitable for mid-band wireless communications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, engineers must identify functional equivalents based on specific electrical parameters such as frequency range, gain, and package type.

HMC407MS8GEHMC407MS8GE
$15.66
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