HMC407MS8GETR

Overview

The HMC407MS8GETR is a GaAs InGaP HBT MMIC power amplifier designed for operation between 5 GHz and 7 GHz. It delivers 15 dB of gain with a P1dB of 25 dBm and an OIP3 of 37 dBm. The device operates on a 5 V supply, drawing 230 mA, and features a noise figure of 5.5 dB. Packaged in an 8-MSOP-EP surface-mount format, it requires no external matching components due to its inherent 50-ohm input and output impedance.

Feature Summary

• High-efficiency GaAs InGaP HBT MMIC construction
• Inherent 50-ohm input and output matching
• No external matching components required
• Surface-mount 8-MSOP-EP package

Applications

• GPS receiver front ends
• Satellite communication systems
• Point-to-point microwave links
• Wireless infrastructure amplifiers

Procurement Notes

Verify the specific suffix (TR vs G) against the manufacturer's current datasheet to confirm packaging and availability status. Confirm that the component is marked as obsolete or limited supply in official channels before finalizing procurement plans. Ensure ESD handling protocols are followed during assembly.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 5–7 GHz range. The integrated 50-ohm matching simplifies PCB layout compared to unmatched devices. Evaluate thermal management requirements given the 230 mA operating current and ensure the 8-MSOP-EP exposed pad is properly connected to ground for optimal performance.

Part Context

This part belongs to the HMC407 family of high-efficiency power amplifiers from Analog Devices. It utilizes GaAs InGaP HBT technology to provide robust performance in RF signal chains. The MS8G and MS8GETR variants share identical electrical characteristics but differ in packaging configuration.

Replacement Considerations

HMC407MS8G