HMC407MS8GTR

Overview

The HMC407MS8GTR is a GaAs InGaP HBT MMIC power amplifier designed for the 5 GHz to 7 GHz frequency range. It operates on a single 5 V supply with a typical current consumption of 230 mA. Key electrical specifications include a gain of 15 dB, a noise figure of 5.5 dB, and a P1dB compression point of 25 dBm. The device features an OIP3 of 37 dBm and is housed in an 8-lead MSOP package with an exposed pad.

Feature Summary

• High efficiency GaAs InGaP HBT MMIC technology
• Integrated bias circuitry for simplified design
• Broadband performance across 5 to 7 GHz

Applications

• HiperLAN applications
• UNII band implementations
• GPS receiver front ends

Procurement Notes

Verify component status as the HMC407MS8GETR variant is listed as obsolete by Analog Devices. Confirm availability through authorized distributors or check for recommended replacements such as the HMC7357LP5GE. Ensure RoHS compliance and lead-free packaging requirements are met for your specific manufacturing process before ordering.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 5-7 GHz range. The 8-MSOP-EP package facilitates thermal management via the exposed pad. Verify that the 5V supply voltage and 230mA current draw align with system power constraints. Ensure impedance matching networks are optimized for the specified bandwidth to achieve the stated gain and noise figure performance.

Part Context

This part belongs to the HMC407 series of RF power amplifiers from Analog Devices. It utilizes GaAs InGaP HBT technology to deliver robust performance in compact surface-mount packages. The series is engineered for wireless communication systems requiring reliable signal amplification in the C-band and related spectrum allocations.

Replacement Considerations

Analog Devices recommends the HMC7357LP5GE as a replacement for the obsolete HMC407MS8GETR. Evaluate pin compatibility and electrical parameter alignment before substitution.