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Product Detailed Parameters
- Description:IC AMP WIMAX 3.3-3.8GHZ 24LFCSP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR)
- Frequency:3.3GHz ~ 3.8GHz
- P1dB:30.5dBm
- Gain:31dB
- Noise Figure:6dB
- RF Type:WiMax
- Voltage - Supply:5V
- Current - Supply:615mA
- Test Frequency:-
- Mounting Type:Surface Mount
- Package / Case:24-VFQFN Exposed Pad
- Supplier Device Package:24-LFCSP (4x4)
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Overview
The HMC409LP4ETR is a surface-mount GaAs/InGaP RF power amplifier designed for WiMax applications. It operates within the 3.3 GHz to 3.8 GHz frequency range and delivers an output power of 1 Watt. The device provides a gain of 31.5 dB with a noise figure of 5.8 dB. It requires a 5 V supply voltage and draws 615 mA of operating current. Key performance metrics include a P1dB compression point of 30.5 dBm and an OIP3 of 45.5 dBm. The component is housed in a QFN-24 package and supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Integrated GaAs/InGaP technology for high-efficiency RF power amplification
- Optimized specifically for WiMax system architectures
- High linearity characteristics supporting complex modulation schemes
Applications
- WiMax base station transmitters
- Point-to-multipoint wireless communication links
- Broadband wireless access systems
Procurement Notes
Verify component authenticity through authorized Analog Devices distributors or certified partners. Request official datasheets and material compliance documentation prior to integration. Confirm that the specific lot matches design requirements, as manufacturing processes may evolve. Ensure proper handling procedures are followed due to moisture sensitivity classification inherent to the QFN-24 package type.
Selection Notes
Select this component when designing for the 3.3–3.8 GHz band requiring 1 Watt output power. Evaluate thermal management capabilities to handle the specified power dissipation levels. Compare against alternative amplifiers if different gain or efficiency profiles are required. Ensure the driving stage can support the necessary input drive levels for optimal performance.
Part Context
This part belongs to the HMC409 series of RF power amplifiers manufactured by Analog Devices Inc. It utilizes advanced GaAs/InGaP heterojunction bipolar transistor (HBT) technology. The series is engineered to meet the stringent linearity and efficiency demands of modern wireless infrastructure equipment.
Replacement Considerations
Public confirmed substitute part numbers: HMC409LP4E.
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