HMC415LP3ETR

Overview

The HMC415LP3ETR is a GaAs InGaP HBT MMIC power amplifier designed for operation between 4.9 GHz and 5.9 GHz. It delivers 20 dB of gain with a noise figure of 6 dB. The device operates on a 3 V supply, drawing 285 mA. Key performance metrics include a P1dB compression point of 22.5 dBm and an OIP3 of 31 dBm. It is housed in a QFN-16 package and functions within a temperature range of -40°C to +85°C.

Feature Summary

• Utilizes GaAs InGaP HBT technology for high-efficiency amplification
• Integrated monolithic microwave integrated circuit (MMIC) design
• Surface-mount compatible QFN-16 packaging

Applications

• HIPERLAN/2 systems
• Wireless LAN applications
• Point-to-point radio links

Procurement Notes

Verify current availability status as the component may be subject to limited supply or discontinuation. Confirm RoHS compliance details through official manufacturer documentation before procurement. Ensure the specific suffix matches the required reel or cut tape configuration for your assembly process.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 5 GHz band. Evaluate thermal management requirements due to the specified power dissipation characteristics. Ensure the system impedance matches the 50 Ohm specification for optimal signal transfer and return loss performance.

Part Context

This part belongs to the Analog Devices HMC series of RF amplifiers. It is specifically engineered for wireless communication standards operating in the 5 GHz frequency range. The device integrates biasing and matching networks within the MMIC structure to simplify PCB layout.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult Analog Devices technical support for validated alternatives if this component is discontinued.