HMC452QS16GETR

Overview

The HMC452QS16GETR is a high dynamic range GaAs InGaP HBT MMIC power amplifier operating between 0.4 and 2.2 GHz. It delivers 1 Watt of output power with 9 dB gain, 31 dBm P1dB, and 48 dBm OIP3. The device operates on a 5 V supply at 485 mA current draw, featuring a noise figure of 7.5 dB and 11 dB input return loss. Packaged in QSOP-16, it functions within -40°C to +85°C.

Feature Summary

• High dynamic range performance utilizing GaAs InGaP HBT technology
• Wideband operation covering 0.4 to 2.2 GHz frequency range
• Integrated monolithic microwave integrated circuit (MMIC) design for compact implementation

Applications

• CDMA systems
• GSM infrastructure
• WCDMA networks

Procurement Notes

Verify component authenticity through authorized Analog Devices channels due to End-of-Life status. Confirm package integrity upon receipt as the QSOP-16 form factor requires careful handling. Cross-reference datasheet revisions to ensure parameter consistency with original specifications before integration into production designs.

Selection Notes

Select this component for wideband applications requiring medium power output within the sub-3 GHz spectrum. Evaluate thermal management requirements given the 2.7 W power dissipation rating. Ensure system impedance matching aligns with the specified 11 dB input return loss for optimal signal transfer efficiency.

Part Context

This part belongs to the HMC452 series of RF amplifiers manufactured by Analog Devices Inc. It represents a specific variant optimized for surface-mount technology integration. The series targets wireless communication base stations and repeaters requiring reliable linear amplification across multiple cellular standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.