HMC452ST89TR

Overview

The HMC452ST89TR is a high dynamic range GaAs InGaP HBT monolithic microwave integrated circuit (MMIC) power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 400 MHz to 2.2 GHz and is housed in an SOT-89 surface-mount package. The device delivers a typical output power of 1 Watt with a P1dB compression point of 31.5 dBm at a test frequency of 2.1 GHz. It requires a 5V supply voltage and draws approximately 510 mA of current. Key electrical characteristics include a gain of 9 dB and a noise figure of 6.5 dB.

Feature Summary

• High dynamic range performance utilizing GaAs InGaP HBT technology
• Integrated MMIC power amplifier design for simplified implementation
• Optimized for wideband operation across cellular communication bands

Applications

• CDMA base station transmitter modules
• GSM infrastructure amplification stages
• WCDMA signal chain components

Procurement Notes

Verify the specific suffix ST89TR against official Analog Devices documentation to confirm the SOT-89 packaging and tape-and-reel configuration. Confirm RoHS compliance status and check for any product change notices or end-of-life declarations prior to procurement, as availability may be restricted.

Selection Notes

Select this component for applications requiring high linearity and power efficiency in the sub-3 GHz spectrum. Ensure the design supports the required 5V bias voltage and thermal management for the SOT-89 package. Evaluate system-level noise requirements against the 6.5 dB noise figure specification.

Part Context

This part belongs to the HMC452 family of RF power amplifiers from Analog Devices. It is designed for general-purpose RF amplification in wireless communication systems. The ST89 variant specifically denotes the SOT-89 surface-mount package option, distinguishing it from other package styles within the same functional family.

Replacement Considerations

Analog Devices recommends the ADL5324ARKZ-R7 as a manufacturer-approved replacement. Verify pin compatibility and electrical parameter alignment before substitution.