HMC455LP3E

Overview

The HMC455LP3E is a GaAs InGaP HBT MMIC amplifier operating between 1.7 and 2.5 GHz. It features a 13 dB gain, 6 dB noise figure, and 150 mA supply current at 5 V. The device delivers high output IP3 performance in a compact surface-mount package.

Feature Summary

• High output third-order intercept point (IP3) for linearity
• GaAs InGaP HBT technology for robust RF performance
• Compact surface-mount QFN-16 packaging

Applications

• Wireless infrastructure equipment
• Point-to-point microwave links
• Test and measurement instrumentation

Procurement Notes

Verify component authenticity through authorized channels due to limited availability status. Confirm datasheet revisions match design requirements. Check for obsolescence notices or lifecycle changes before finalizing procurement plans. Ensure supply chain stability for production continuity.

Selection Notes

Select this component for applications requiring high linearity in the 1.7–2.5 GHz range. Evaluate thermal management needs given the 150 mA supply current. Compare against lower-gain alternatives if power consumption is critical. Verify impedance matching networks for optimal gain flatness across the band.

Part Context

Part of the HMC455 series of high-performance MMIC amplifiers. Designed for general-purpose RF applications where linearity and gain are prioritized. Manufactured using Analog Devices' proprietary GaAs HBT process for consistent performance.

Replacement Considerations

No officially confirmed substitute part numbers are documented in public sources. Designers should evaluate functional equivalents based on frequency range, gain, and IP3 specifications independently.