HMC457QS16GETR

Overview

The HMC457QS16GETR is a high-performance GaAs InGaP HBT MMIC power amplifier designed for radio frequency applications. It operates within the 1.7 GHz to 2.2 GHz frequency range, delivering a typical gain of 27 dB and an output power at 1 dB compression (P1dB) of 29 dBm. The device is housed in a 16-lead QSOP package with exposed pad (QSOPG). It is classified as a general-purpose narrow-band medium power amplifier suitable for various RF systems requiring reliable signal amplification.

Feature Summary

• Utilizes GaAs InGaP HBT MMIC technology for robust performance
• Provides high output power capability suitable for medium power applications
• Features a compact surface-mount package design

Applications

• General purpose RF amplification
• Narrow band communication systems
• Medium power transmitter stages

Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging when sourcing. Confirm the manufacturer is Analog Devices Inc. Ensure the package type matches the 16-QSOPG specification. Check for active status as product availability may vary by region or distributor.

Selection Notes

Select this component for designs requiring a 27 dB gain profile within the 1.7-2.2 GHz band. Consider the 29 dBm P1dB rating against system linearity requirements. Evaluate the QSOPG package for thermal management needs relative to the medium power classification.

Part Context

This part belongs to the family of GaAs MMIC power amplifiers from Analog Devices. It serves as a medium-power solution for RF front-end modules. The QSOPG package facilitates integration into space-constrained PCB layouts while maintaining thermal efficiency through the exposed pad.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.