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Product Detailed Parameters
- Description:IC AMP CELLULAR 0HZ-6GHZ MICRO-P
- Series:-
- Mfr:Analog Devices Inc.
- Package:Strip
- Frequency:0Hz ~ 6GHz
- P1dB:12dBm
- Gain:20dB
- Noise Figure:2.5dB ~ 3.5dB
- RF Type:Cellular, CATV
- Voltage - Supply:5V ~ 12V
- Current - Supply:35mA
- Test Frequency:-
- Mounting Type:Surface Mount
- Package / Case:SOT-86
- Supplier Device Package:Micro-P
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Overview
The HMC476MP86E is a SiGe HBT gain block MMIC amplifier covering DC to 6 GHz. It operates on a single +5V to +12V supply with a typical current of 35 mA. Key electrical parameters include a gain of 20 dB, noise figure of 2.5 dB, P1dB output power of +12 dBm, and OIP3 of +25 dBm. The device features 50 Ohm I/Os and is housed in a Micro-P-4 (SOT-86) surface-mount package.
Feature Summary
- Utilizes SiGe HBT technology for high-performance RF amplification
- Cascadable architecture suitable for multi-stage applications
- Integrated 50 Ohm input and output matching networks
Applications
- Cellular infrastructure systems
- CATV distribution networks
- Wireless local loop equipment
Procurement Notes
Verify the specific suffix variant against official Analog Devices documentation, as packaging or tape specifications may differ between MP86 and MP86ETR designations. Confirm RoHS compliance status and MSL rating prior to integration. Cross-reference the manufacturer part number with authorized distributor catalogs to ensure authenticity and traceability of the component batch.
Selection Notes
Select this component for wideband applications requiring low noise and high linearity within the DC to 6 GHz range. Evaluate thermal dissipation requirements based on the 504 mW power dissipation specification. Ensure the system voltage aligns with the +5V to +12V single-supply operation constraints for optimal performance and stability.
Part Context
This part belongs to the HMC476 series of gain block amplifiers manufactured by Analog Devices. It represents a monolithic microwave integrated circuit designed for robust RF signal processing. The series is characterized by its use of silicon germanium heterojunction bipolar transistor technology to deliver consistent gain and noise performance across a broad frequency spectrum.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Analog Devices technical support for direct replacements or pin-compatible alternatives if this specific model is discontinued or unavailable.
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