HMC479ST89E

HMC479ST89E

  • Description:IC RF AMP GPS 0HZ-5GHZ SOT89
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Strip

SKU:fb026e43a81a Category: Brand:

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Product Detailed Parameters

  • Description:IC RF AMP GPS 0HZ-5GHZ SOT89
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Strip
  • Frequency:0Hz ~ 5GHz
  • P1dB:18dBm
  • Gain:15dB
  • Noise Figure:4.5dB
  • RF Type:General Purpose
  • Voltage - Supply:5V ~ 12V
  • Current - Supply:75mA
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

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HMC479ST89E

Overview

The HMC479ST89E is a SiGe Heterojunction Bipolar Transistor (HBT) gain block MMIC amplifier manufactured by Analog Devices Inc. Designed for general-purpose RF applications, this single-channel device operates across a frequency range of 0 Hz to 5 GHz. It is housed in a surface-mount SOT-89 package and requires an operating supply voltage of 8 V with a typical current consumption of 75 mA. The component delivers high performance with a maximum power dissipation of 960 mW and supports an operating temperature range from -40°C to +85°C.

Feature Summary

  • Utilizes SiGe HBT technology for robust signal amplification
  • Wideband operational capability covering DC to 5 GHz
  • Single-channel configuration for compact circuit integration

Applications

  • General-purpose RF signal chain amplification
  • Wireless communication infrastructure components
  • Test and measurement equipment front-ends

Procurement Notes

Verify the specific suffix 'E' against official Analog Devices documentation to confirm RoHS compliance status and exact pinout configuration. Cross-reference the manufacturer part number with authorized distributor catalogs to ensure authenticity, as counterfeit components may exist. Confirm that the SOT-89 package matches your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a wideband gain block is required for frequencies up to 5 GHz. The SiGe HBT process offers a balance of noise performance and linearity suitable for general RF tasks. Ensure the 8V supply voltage aligns with your system design constraints. Consider the 960 mW power dissipation limit for thermal management planning within the SOT-89 enclosure.

Part Context

This device belongs to the HMC series of monolithic microwave integrated circuits (MMICs) produced by Analog Devices Inc., formerly Hittite Microwave. These components are engineered for high-reliability RF and microwave applications. The HMC479 specifically targets broadband amplification needs where consistent gain and low noise are critical across a wide spectrum.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Analog Devices technical support or official distribution channels for verified cross-reference data.

HMC479ST89EHMC479ST89E

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