HMC499

Overview

The HMC499 is a GaAs PHEMT MMIC medium power amplifier operating between 21 and 32 GHz. It provides 16 dB of gain with a noise figure of 6.5 dB. The device features a P1dB compression point of 23 dBm and an OIP3 of 30 dBm. It requires a 5 V supply and draws 200 mA. The input return loss is 10 dB, and power dissipation is 1.5 W. Operating temperature ranges from -55°C to +85°C.

Feature Summary

• High dynamic range GaAs PHEMT MMIC construction
• Medium power amplification in the 21-32 GHz frequency band
• Single-channel RF amplifier design

Applications

• Point-to-point microwave radio links
• Point-to-multipoint wireless systems
• Electronic warfare subsystems

Procurement Notes

Verify component authenticity through authorized Analog Devices channels or certified distributors. Confirm lot traceability and RoHS compliance status prior to integration. Note that availability may be restricted or subject to factory special order conditions. Ensure handling procedures account for the die package format and sensitivity to electrostatic discharge during assembly.

Selection Notes

Select this component when a high-dynamic-range medium power amplifier is required for E-band applications. The GaAs PHEMT technology supports operation across a wide temperature range suitable for harsh environments. Consider the die form factor if custom packaging or hybrid module integration is planned for the specific RF front-end architecture.

Part Context

The HMC499 belongs to the Analog Devices Hittite Microwave series of monolithic microwave integrated circuits. It is designed as a standalone medium power amplifier stage. The device utilizes gallium arsenide pseudomorphic high-electron-mobility transistor technology to achieve performance metrics suitable for high-frequency wireless communications and radar systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.