HMC546MS8GETR

RF Switches Overview

The HMC546MS8GETR is a GaAs MMIC SPDT RF switch operating from 200 MHz to 2.2 GHz. It features low insertion loss of 0.4 dB and typical off-isolation of 24 dB. The device supports positive voltage control with a supply range of 3 V to 8 V. It is housed in an 8-lead MSOP package, rated for operation between -40°C and +85°C, with a maximum power dissipation of 1.12 W.

RF Switches Feature Summary

• SPDT configuration optimized for transmit-receive applications
• GaAs MMIC technology for high performance
• Positive voltage control compatibility

RF Switches Applications

• Transmit-receive modules
• Cellular base stations
• Wireless local loop systems

RF Switches Procurement Notes

Verify the specific suffix 'TR' indicates reel packaging when sourcing. Confirm RoHS compliance status through official documentation. Check current availability as supply may be limited or subject to factory special orders. Ensure the 8-lead MSOP footprint matches the target PCB design constraints.

RF Switches Selection Notes

Select this component for applications requiring a cost-effective SPDT switch within the sub-GHz to 2.2 GHz range. Consider the 0.4 dB insertion loss for signal integrity. Evaluate the 8 V maximum supply voltage against system power budgets. Verify thermal management requirements given the 1.12 W power dissipation rating.

RF Switches Part Context

This part belongs to the Hittite (now Analog Devices) HMC546 series of RF switches. It is designed as a low-cost solution for medium-power switching tasks. The MSOP8G package provides a compact form factor suitable for space-constrained wireless designs.

RF Switches Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.