HMC709LC5

HMC709LC5

  • Description:IC UPCONVERTER IQ 32SMD
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Strip

SKU:1ea7bf353c07 Category: Brand:

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Product Detailed Parameters

  • Description:IC UPCONVERTER IQ 32SMD
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Strip
  • Function:Upconverter
  • Frequency:11GHz ~ 17GHZ
  • RF Type:Radar
  • Secondary Attributes:-
  • Mounting Type:Surface Mount
  • Package / Case:32-TFQFN Exposed Pad
  • Supplier Device Package:32-QFN (5x5)
  • Grade:-
  • Qualification:-

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HMC709LC5

Overview

The HMC709LC5 is a compact Gallium Arsenide Monolithic Microwave Integrated Circuit (GaAs MMIC) I/Q upconverter designed for high-frequency applications. It features an integrated local oscillator amplifier and operates within a frequency range of 10 GHz to 18 GHz. The device provides a small signal conversion gain of 13 dB and achieves -20 dBc sideband suppression. Key electrical specifications include a P1dB compression point of 20.5 dBm and an operating supply voltage of 5 V. It is housed in a leadless, RoHS-compliant surface-mount package.

Feature Summary

  • Integrated local oscillator amplifier eliminates external LO circuitry requirements
  • High sideband suppression performance ensures clean signal translation
  • Compact leadless surface-mount package facilitates dense PCB layouts

Applications

  • Radar systems
  • Point-to-point microwave links
  • Electronic warfare subsystems

Procurement Notes

Verify the specific suffix LC5 against the manufacturer's current datasheet to confirm pinout compatibility and thermal pad configuration. Ensure that the receiving board design supports the exposed pad requirement for proper grounding and heat dissipation. Cross-reference the lot date code with project timelines to avoid obsolescence risks associated with legacy GaAs processes.

Selection Notes

Select this component when a monolithic solution for I/Q upconversion is required at frequencies between 10 GHz and 18 GHz. It is suitable for designs prioritizing size reduction and simplified RF front-end architecture by integrating the LO amplifier. Consider the 5 V supply requirement and thermal management needs inherent to the GaAs technology and SMT packaging constraints.

Part Context

This part belongs to Analog Devices' portfolio of high-performance RF integrated circuits derived from the Hittite Microwave acquisition. It serves as a specialized building block for wideband communication and sensing systems requiring precise frequency translation. The device represents a transition toward more integrated solutions compared to discrete mixer and amplifier combinations.

Replacement Considerations

No public confirmed substitute part numbers are available.

HMC709LC5HMC709LC5

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