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The HMC709LC5 is a compact Gallium Arsenide Monolithic Microwave Integrated Circuit (GaAs MMIC) I/Q upconverter designed for high-frequency applications. It features an integrated local oscillator amplifier and operates within a frequency range of 10 GHz to 18 GHz. The device provides a small signal conversion gain of 13 dB and achieves -20 dBc sideband suppression. Key electrical specifications include a P1dB compression point of 20.5 dBm and an operating supply voltage of 5 V. It is housed in a leadless, RoHS-compliant surface-mount package.
Verify the specific suffix LC5 against the manufacturer's current datasheet to confirm pinout compatibility and thermal pad configuration. Ensure that the receiving board design supports the exposed pad requirement for proper grounding and heat dissipation. Cross-reference the lot date code with project timelines to avoid obsolescence risks associated with legacy GaAs processes.
Select this component when a monolithic solution for I/Q upconversion is required at frequencies between 10 GHz and 18 GHz. It is suitable for designs prioritizing size reduction and simplified RF front-end architecture by integrating the LO amplifier. Consider the 5 V supply requirement and thermal management needs inherent to the GaAs technology and SMT packaging constraints.
This part belongs to Analog Devices' portfolio of high-performance RF integrated circuits derived from the Hittite Microwave acquisition. It serves as a specialized building block for wideband communication and sensing systems requiring precise frequency translation. The device represents a transition toward more integrated solutions compared to discrete mixer and amplifier combinations.
No public confirmed substitute part numbers are available.