HMC930

Overview

The HMC930 is a GaAs pHEMT MMIC distributed power amplifier operating from DC to 40 GHz. It provides 13 dB gain, 33.5 dBm output IP3, and 22 dBm output power at 1 dB gain compression with 175 mA current draw at 10 V. The device features internal 50 Ω input/output matching for easy integration into multi-chip modules. Data are obtained via 0.31 mm bond wires.

Feature Summary

• Utilizes a cascoded distributed architecture with stacked FETs for wideband performance
• Features internally matched 50 Ω input and output interfaces
• Operates on a single 10 V supply with low current consumption

Applications

• Electronic warfare systems
• Electronic countermeasures (ECM)
• Radar equipment
• Test instrumentation

Procurement Notes

Verify the specific suffix of the ordered part number against the official datasheet to confirm package type and tape/reel specifications. Ensure that any ordering suffixes do not alter the electrical function or pinout unless explicitly documented by Analog Devices. Confirm compatibility with the intended biasing sequence to prevent device damage during initial testing.

Selection Notes

Select this component for applications requiring high linearity and broad bandwidth up to 40 GHz. The internal 50 Ω matching simplifies circuit design by eliminating external matching networks. Consider the thermal management requirements associated with the specified power dissipation levels in dense multi-chip module configurations.

Part Context

This component belongs to the Hittite Microwave Corporation product line, now integrated into Analog Devices. It represents a high-frequency monolithic microwave integrated circuit designed for demanding RF applications where wide bandwidth and linear performance are critical requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.