HMC930A

HMC930A

  • Description:IC RF AMP 0HZ-40GHZ DIE
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tray

SKU:84540ef6b753 Category: Brand:

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Product Detailed Parameters

  • Description:IC RF AMP 0HZ-40GHZ DIE
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tray
  • Frequency:0Hz ~ 40GHz
  • P1dB:23dBm
  • Gain:13.5dB
  • Noise Figure:4.5dB
  • RF Type:-
  • Voltage - Supply:10V
  • Current - Supply:175mA
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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HMC930A

Overview

The HMC930A is a GaAs pHEMT MMIC distributed power amplifier operating from DC to 40 GHz. It provides 13 dB gain, 22 dBm output power at 1 dB gain compression, and 33.5 dBm output IP3. The device consumes 175 mA at a 10 V supply. Internal 50 Ω matching facilitates integration into multi-chip modules. Data is obtained via wire bonding on the bare die.

Feature Summary

  • GaAs pHEMT technology for high-frequency performance
  • Distributed architecture maintaining acceptable gain across wide bandwidth
  • Internally matched 50 Ω input and output ports
  • Positive gain slope in the 8 GHz to 32 GHz range

Applications

  • Electronic Warfare (EW)
  • Electronic Countermeasures (ECM)
  • Radar systems
  • Test equipment

Procurement Notes

Verify the specific part designation includes the '-DIE' suffix to confirm the component is supplied as an unencapsulated bare die rather than a packaged module. Ensure procurement documentation references the correct Analog Devices datasheet for the HMC930A-DIE variant. Confirm that handling procedures account for the fragile nature of the exposed semiconductor substrate and wire bonds during assembly.

Selection Notes

Select this component when a wideband solution covering DC to 40 GHz is required with moderate gain and high linearity. The internal 50 Ω matching simplifies circuit design by eliminating external matching networks. Consider the positive gain slope characteristic if flat response is not critical within the 8 GHz to 32 GHz band. Verify that the system can accommodate the 10 V bias voltage and associated current consumption.

Part Context

The HMC930A belongs to Analog Devices' portfolio of microwave monolithic integrated circuits (MMICs). It utilizes a cascaded distributed architecture where basic units consist of stacked field-effect transistors connected by transmission lines. This design allows for broader bandwidth operation compared to single-stage amplifiers, making it suitable for demanding RF applications requiring consistent performance over a vast frequency range.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

HMC930AHMC930A

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