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Product Detailed Parameters
- Description:IC RF AMP 0HZ-40GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:0Hz ~ 40GHz
- P1dB:23dBm
- Gain:13.5dB
- Noise Figure:4.5dB
- RF Type:-
- Voltage - Supply:10V
- Current - Supply:175mA
- Test Frequency:-
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC930A is a GaAs pHEMT MMIC distributed power amplifier operating from DC to 40 GHz. It provides 13 dB gain, 22 dBm output power at 1 dB gain compression, and 33.5 dBm output IP3. The device consumes 175 mA at a 10 V supply. Internal 50 Ω matching facilitates integration into multi-chip modules. Data is obtained via wire bonding on the bare die.
Feature Summary
- GaAs pHEMT technology for high-frequency performance
- Distributed architecture maintaining acceptable gain across wide bandwidth
- Internally matched 50 Ω input and output ports
- Positive gain slope in the 8 GHz to 32 GHz range
Applications
- Electronic Warfare (EW)
- Electronic Countermeasures (ECM)
- Radar systems
- Test equipment
Procurement Notes
Verify the specific part designation includes the '-DIE' suffix to confirm the component is supplied as an unencapsulated bare die rather than a packaged module. Ensure procurement documentation references the correct Analog Devices datasheet for the HMC930A-DIE variant. Confirm that handling procedures account for the fragile nature of the exposed semiconductor substrate and wire bonds during assembly.
Selection Notes
Select this component when a wideband solution covering DC to 40 GHz is required with moderate gain and high linearity. The internal 50 Ω matching simplifies circuit design by eliminating external matching networks. Consider the positive gain slope characteristic if flat response is not critical within the 8 GHz to 32 GHz band. Verify that the system can accommodate the 10 V bias voltage and associated current consumption.
Part Context
The HMC930A belongs to Analog Devices' portfolio of microwave monolithic integrated circuits (MMICs). It utilizes a cascaded distributed architecture where basic units consist of stacked field-effect transistors connected by transmission lines. This design allows for broader bandwidth operation compared to single-stage amplifiers, making it suitable for demanding RF applications requiring consistent performance over a vast frequency range.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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