HN1A01F-Y(TE85L,F)

Overview

The Toshiba HN1A01F-Y(TE85L,F) is a dual PNP epitaxial transistor in an SM6 package. It features a collector-emitter voltage (VCEO) of -50 V and a maximum continuous collector current (IC) of -150 mA. The DC current gain (hFE) ranges from 120 to 240 for the Y grade, with a transition frequency (fT) of 80 MHz at IC = -1 mA. Power dissipation is rated at 300 mW, and the junction temperature reaches 125°C.

Feature Summary

• Dual PNP configuration within a compact surface-mount package
• High voltage and high current capability suitable for general-purpose amplification
• Excellent hFE linearity across operating currents

Applications

• Audio-frequency general-purpose amplifier circuits
• General-purpose switching applications
• Signal processing stages requiring dual complementary transistors

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and environmental compliance status. Ensure that the Y classification aligns with the required hFE range for your design specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP structure is required in a small footprint. The Y grade provides an hFE range of 120 to 240, which may differ from other grades like GR. Consider the 300 mW power dissipation limit and thermal derating requirements for high-temperature environments.

Part Context

This device belongs to the HN1A01F series of silicon PNP epitaxial transistors manufactured using Toshiba's PCT process. It is designed specifically for audio-frequency applications where low noise and high linearity are critical performance factors.

Replacement Considerations

Check for direct equivalents such as the HN1A01FU or HN1A01FE variants. Verify pinout compatibility and electrical parameter overlaps, particularly the hFE classification and package dimensions, before substituting.