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The HN1A01FE-GR,LF is a dual PNP epitaxial transistor array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -150 mA. The device offers a high DC current gain (hFE) ranging from 120 to 400, with excellent linearity where the ratio of hFE at -0.1 mA to -2 mA is typically 0.95. Packaged in a compact US6 form factor, it is designed for audio-frequency general-purpose amplifier applications.
Verify the specific suffix GR,LF against official Toshiba documentation to confirm packaging type and RoHS compliance status. Ensure the part number matches the exact datasheet revision required for your design. Cross-reference with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a dual PNP configuration is required in a minimal footprint. Consider its -50 V rating and -150 mA current capacity for low-power analog or switching tasks. Evaluate the high hFE range and linearity if signal fidelity is critical in audio or precision amplifier stages.
This part belongs to Toshiba's HN1 series of dual bipolar transistor arrays. These components are engineered to replace discrete dual-transistor setups, saving board space. The HN1A01FE variant specifically targets audio and general-purpose applications requiring high gain and linearity in a compact surface-mount package.
Publicly confirmed direct substitute part numbers for HN1A01FE-GR,LF were not found in the provided source material. Verify compatibility with alternative dual PNP arrays such as those from other manufacturers only after confirming pinout and electrical parameter equivalence through official datasheets.