HN1A01FE-GR,LF

HN1A01FE-GR,LF

  • Description:TRANS 2PNP DUAL 50V 150MA ES6
  • Series:-

SKU:0edc69992522 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 50V 150MA ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:100mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6
  • Grade:-
  • Qualification:-

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HN1A01FE-GR,LF

Overview

The HN1A01FE-GR,LF is a dual PNP epitaxial transistor array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -150 mA. The device offers a high DC current gain (hFE) ranging from 120 to 400, with excellent linearity where the ratio of hFE at -0.1 mA to -2 mA is typically 0.95. Packaged in a compact US6 form factor, it is designed for audio-frequency general-purpose amplifier applications.

Feature Summary

  • Dual PNP configuration within a single small package
  • High voltage and current handling capabilities
  • High current gain with excellent linearity characteristics

Applications

  • Audio-frequency general-purpose amplifiers
  • Small signal processing circuits
  • General-purpose switching applications

Procurement Notes

Verify the specific suffix GR,LF against official Toshiba documentation to confirm packaging type and RoHS compliance status. Ensure the part number matches the exact datasheet revision required for your design. Cross-reference with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a dual PNP configuration is required in a minimal footprint. Consider its -50 V rating and -150 mA current capacity for low-power analog or switching tasks. Evaluate the high hFE range and linearity if signal fidelity is critical in audio or precision amplifier stages.

Part Context

This part belongs to Toshiba's HN1 series of dual bipolar transistor arrays. These components are engineered to replace discrete dual-transistor setups, saving board space. The HN1A01FE variant specifically targets audio and general-purpose applications requiring high gain and linearity in a compact surface-mount package.

Replacement Considerations

Publicly confirmed direct substitute part numbers for HN1A01FE-GR,LF were not found in the provided source material. Verify compatibility with alternative dual PNP arrays such as those from other manufacturers only after confirming pinout and electrical parameter equivalence through official datasheets.

HN1A01FE-GR,LFHN1A01FE-GR,LF

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