HN1A01FU-GR,LF

Overview

The HN1A01FU-GR,LF is a dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a US6 surface-mount package. The device supports a maximum collector current of 150 mA and withstands a collector-emitter voltage of 50 V. Key electrical parameters include a transition frequency of 80 MHz and a power dissipation rating of 200 mW. The component operates at junction temperatures up to 125°C and complies with RoHS standards.

Feature Summary

• Integrates complementary NPN and PNP transistors in a single compact package for space-constrained designs.
• Optimized for high-speed switching applications with an 80 MHz transition frequency.
• Features low saturation voltage characteristics to minimize power loss during conduction.

Applications

• Motor driver circuits requiring complementary output stages.
• Logic level shifting interfaces between different voltage domains.
• General-purpose switching applications in consumer electronics.

Procurement Notes

Verify the specific suffix GR against official Toshiba documentation to confirm pinout and electrical tolerances, as suffixes may indicate variations in packaging or testing criteria. Ensure the component matches the required US6 footprint and lead-free specifications for the target assembly process.

Selection Notes

Select this component when a matched NPN/PNP pair is required for push-pull configurations or differential amplification. Compare the 150 mA current limit and 50 V voltage rating against circuit requirements. Consider the US6 package dimensions if board real estate is limited compared to larger discrete transistor options.

Part Context

This part belongs to Toshiba's HN1 series of pre-biased and dual BJT arrays. These components are designed to simplify circuit design by replacing multiple discrete transistors and biasing resistors. The HN1A01FU-GR variant specifically offers complementary polarity configuration within the standard US6 form factor used across various Toshiba semiconductor products.

Replacement Considerations

Publicly confirmed substitute part numbers for HN1A01FU-GR are not available in the provided source material. Verify compatibility with alternative dual BJT arrays from other manufacturers based on matching pinouts, voltage ratings, and package dimensions.