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The HN1A01FU-Y,LF is a dual PNP bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in a US-6 surface-mount package. The device supports a maximum DC collector current of 150 mA and features a collector-emitter breakdown voltage (VCEO) of 50 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 200 mW. The component exhibits a gain-bandwidth product (fT) of 80 MHz and a collector-emitter saturation voltage of 100 mV.
Verify the specific ordering suffix to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm that the US-6 package dimensions align with the target PCB footprint. Check the manufacturer's latest documentation for any updates regarding supply status or recommended operating conditions before finalizing procurement plans.
Select this component when a dual PNP BJT array is required in a small surface-mount form factor. Ensure the application demands a 50 V rating and 150 mA current capacity. Consider the 200 mW power dissipation limit and thermal management requirements for the US-6 package during circuit design.
This part belongs to the HN1A01 series of dual PNP transistors from Toshiba. It shares functional similarities with other dual BJT arrays but is distinct due to its specific US-6 packaging and electrical characteristics. The series is commonly used in portable devices where space efficiency and reliable switching performance are critical.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical specifications before considering alternative manufacturers.