HN1A01FU-Y,LF

HN1A01FU-Y,LF

$0.19
  • Description:TRANS 2PNP DUAL 50V 150MA US6
  • Series:-

SKU:f89610a92b7f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 50V 150MA US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
  • Power - Max:200mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6
  • Grade:-
  • Qualification:-

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HN1A01FU-Y,LF

Overview

The HN1A01FU-Y,LF is a dual PNP bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in a US-6 surface-mount package. The device supports a maximum DC collector current of 150 mA and features a collector-emitter breakdown voltage (VCEO) of 50 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 200 mW. The component exhibits a gain-bandwidth product (fT) of 80 MHz and a collector-emitter saturation voltage of 100 mV.

Feature Summary

  • Dual PNP configuration within a compact US-6 surface-mount package
  • Operates with a maximum collector current of 150 mA
  • Provides 50 V collector-emitter and collector-base breakdown ratings
  • Designed for high-frequency applications with an 80 MHz transition frequency

Applications

  • General-purpose switching circuits requiring dual PNP transistors
  • Logic interface stages in consumer electronics
  • Signal amplification in low-power audio or RF systems

Procurement Notes

Verify the specific ordering suffix to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm that the US-6 package dimensions align with the target PCB footprint. Check the manufacturer's latest documentation for any updates regarding supply status or recommended operating conditions before finalizing procurement plans.

Selection Notes

Select this component when a dual PNP BJT array is required in a small surface-mount form factor. Ensure the application demands a 50 V rating and 150 mA current capacity. Consider the 200 mW power dissipation limit and thermal management requirements for the US-6 package during circuit design.

Part Context

This part belongs to the HN1A01 series of dual PNP transistors from Toshiba. It shares functional similarities with other dual BJT arrays but is distinct due to its specific US-6 packaging and electrical characteristics. The series is commonly used in portable devices where space efficiency and reliable switching performance are critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical specifications before considering alternative manufacturers.

HN1A01FU-Y,LFHN1A01FU-Y,LF
$0.19
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