HN1A01FU-Y,LXHF

Overview

The Toshiba HN1A01FU-Y,LXHF is a dual PNP epitaxial planar silicon transistor designed for audio-frequency general-purpose amplifier applications. It features a US-6 surface-mount package and supports a maximum collector current of 150 mA with a collector-emitter voltage rating of -50 V. The device exhibits a high DC current gain (hFE) ranging from 120 to 400, ensuring excellent linearity where the ratio of hFE at -0.1 mA to -2 mA is typically 0.95. Key electrical parameters include a collector-base voltage of -50 V, an emitter-base voltage of -5 V, and a saturation voltage of 100 mV. Power dissipation is rated at 200 mW, with a transition frequency (fT) of 80 MHz.

Feature Summary

• Dual PNP configuration in a compact US-6 surface-mount package
• High current gain (hFE) range of 120 to 400 for amplification efficiency
• Excellent hFE linearity maintaining consistent performance across current levels
• Designed specifically for audio-frequency general-purpose amplifier circuits

Applications

• Audio-frequency general-purpose amplifier stages
• Small signal amplification in consumer electronics
• General-purpose switching and logic interface circuits

Procurement Notes

Verify the complete part number including the suffix -Y,LXHF against official Toshiba Semiconductor documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status as indicated by the LF suffix in procurement records. Cross-reference the Mouser component ID 757-hn1a01fu-ylf for accurate distributor identification. Ensure the source document explicitly lists this specific suffix combination to avoid substitution errors with standard reel variants.

Selection Notes

Select this component when a dual PNP transistor with high gain linearity is required for audio applications. The US-6 package suits space-constrained designs compared to larger through-hole alternatives. Consider the 80 MHz transition frequency limit for signal bandwidth requirements. Verify that the -50 V voltage rating meets the circuit's supply headroom needs. Compare power dissipation limits against thermal management capabilities in the final assembly.

Part Context

This component belongs to Toshiba's HN1A series of dual bipolar junction transistors. The HN1A01F variant serves as the base model for this family, optimized for audio frequency applications using epitaxial planar technology. The HN1A01FU designation indicates the specific surface-mount version. This series provides matched characteristics for differential or push-pull configurations commonly found in analog signal processing paths.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Engineering teams must consult official Toshiba cross-reference guides or equivalent manufacturer datasheets to identify compatible replacements with matching pinouts and electrical specifications.