HN1B01FU-GR,LF

Overview

The HN1B01FU-GR,LF is a dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial planar transistor in a compact SMD package. The device is designed for low-frequency small-signal amplification applications. Key electrical parameters include a maximum collector current of 150 mA and a collector-emitter voltage (Vceo) of 50 V. The gain-bandwidth product (Ft) is specified at 150 MHz for the NPN section and 120 MHz for the PNP section. Power dissipation is rated at 200 mW, with a saturation voltage of 100 mV.

Feature Summary

• Dual configuration integrating complementary NPN and PNP transistors in a single package
• Optimized for low-frequency small-signal amplification tasks
• Surface-mount design suitable for automated assembly processes

Applications

• Low frequency small-signal amplification circuits
• Audio frequency general purpose amplifier applications
• Switching circuits requiring complementary polarity control

Procurement Notes

Verify the component authenticity by checking the manufacturer marking on the package against official Toshiba Semiconductor and Storage documentation. Ensure the ordering suffix matches the specific tape-and-reel or cut-tape variant required for your production line. Confirm RoHS compliance status through the latest datasheet revision to meet environmental regulations. Cross-reference the EIAJ code and date code to ensure compatibility with your supply chain requirements.

Selection Notes

Select this component when a compact solution for complementary switching or amplification is required. The dual NPN/PNP configuration reduces board space compared to discrete components. Consider the 150 mA current rating and 50 V voltage limits for circuit design. The 150 MHz bandwidth supports audio and low-speed signal processing needs. Evaluate thermal management capabilities given the 200 mW power dissipation limit in the SOT-363 package.

Part Context

This part belongs to the HN1B series of dual BJT arrays from Toshiba Semiconductor and Storage. It is functionally related to the HN1B04FU-GR,LF, which shares similar packaging and application domains but may differ in specific internal transistor matching or electrical characteristics. Both are designed for surface-mount technology integration in consumer electronics and industrial control systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Designers should consult Toshiba Semiconductor and Storage official documentation for qualified alternatives or cross-reference guides.