HN1B04FE-GR,LXHF

Overview

The HN1B04FE-GR,LXHF is a pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. The device features a collector-emitter voltage rating of 50V and a continuous collector current of 100mA. Internal base and emitter resistors are both specified at 4.7 kΩ. The component operates with a maximum power dissipation of 100mW and supports a transition frequency of 250MHz. It is qualified to AEC-Q101 standards for automotive applications and utilizes the ES6 supplier device package.

Feature Summary

• Integrated dual NPN configuration with fixed internal bias resistors simplifies circuit design
• AEC-Q101 qualification ensures reliability for automotive electronic systems
• Compact ES6 surface-mount package facilitates high-density PCB layouts

Applications

• Automotive logic switching circuits
• General-purpose digital signal buffering
• Interface driver stages in control modules

Procurement Notes

Verify the complete part number including the suffix against official Toshiba documentation to ensure correct packaging and variant selection. Confirm that the ES6 package designation matches the intended footprint requirements. Check for specific automotive grade certifications if deploying in safety-critical environments. Ensure compatibility with automated assembly processes regarding the tape and reel specifications provided by authorized distributors.

Selection Notes

Select this component when a dual NPN solution with integrated biasing is required to reduce external component count. The 50V rating suits low-voltage logic interfaces. Verify that the 100mA current limit meets load requirements. Consider the 100mW power dissipation constraint for thermal management in enclosed spaces. Compare against single transistor solutions if only one channel is needed to optimize board space.

Part Context

This part belongs to the HN1Bxx series of pre-biased transistor arrays from Toshiba. These devices are designed to replace multiple discrete components, including transistors and resistors, in digital switching applications. The series offers various resistor values and configurations to accommodate different logic families and drive requirements while maintaining a small physical footprint.

Replacement Considerations

Direct substitutes include other Toshiba RN or HN series pre-biased arrays with identical pinouts and electrical characteristics. Cross-reference with equivalent parts from other manufacturers ensuring matching Vceo, Ic, and resistor values. Verify package compatibility before substitution.