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The HN1B04FE-Y,LF is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors within a compact ES-6 (SOT-563) surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA per element. Key electrical characteristics include a DC current gain (hFE) range of 100 to 200 at a collector current of 10mA, and a low saturation voltage of 150mV maximum at IC=50mA. The unit operates reliably across a temperature range from -55°C to +150°C, ensuring stability in demanding electronic environments.
Verify the complete ordering part number against official Toshiba documentation to ensure correct suffix alignment. Confirm RoHS compliance status and specific tape-and-reel quantities directly with authorized distributors or the manufacturer prior to purchase. Ensure storage conditions adhere to specified humidity and temperature limits to maintain device integrity.
Select this component when a dual NPN pre-biased solution is required in an ES-6 package. Verify that the 50V voltage rating and 100mA current limit meet the target application requirements. Consider the integrated resistor values if precise base drive currents are critical for the specific logic family being interfaced.
This part belongs to Toshiba's line of pre-biased transistor arrays designed for space-saving designs. It serves as a functional alternative to discrete transistor-resistor combinations, offering consistent electrical characteristics and reduced board space. The ES-6 package is standard for multi-transistor arrays requiring minimal footprint.
Check for direct pin-compatible alternatives such as the HN1B04FU variant if different packaging is needed. Verify equivalent electrical parameters including hFE ranges and saturation voltages before substituting with parts from other manufacturers to ensure circuit compatibility.