HN1B04FU-GR,LF

HN1B04FU-GR,LF

$0.22
  • Description:TRANS NPN/PNP 50V 150MA US6
  • Series:-

SKU:102a29f14d3d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 150MA US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:200mW
  • Frequency - Transition:150MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6
  • Grade:-
  • Qualification:-

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HN1B04FU-GR,LF

Overview

The HN1B04FU-GR,LF is a silicon PNP epitaxial type transistor manufactured by Toshiba Semiconductor and Storage. It is designed for audio frequency general-purpose amplifier applications. The component utilizes the PCT process technology to ensure high reliability and consistent performance in analog signal processing circuits.

Feature Summary

  • Utilizes silicon PNP epitaxial structure with PCT process technology
  • Optimized for audio frequency general-purpose amplifier applications

Applications

  • Audio frequency general-purpose amplifier stages
  • Driver stage amplification circuits

Part Context

This component belongs to the HN1B series of pre-biased transistors from Toshiba Semiconductor and Storage. The suffix GR indicates tape and reel packaging, while LF denotes lead-free compliance. It is part of a family including variants like HN1B04FU and HN1B04FU-Y.

HN1B04FU-GR,LFHN1B04FU-GR,LF
$0.22
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