SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The HN1B04FU-Y,LF is a silicon PNP epitaxial type dual transistor array manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for high-speed switching performance. The device features a maximum collector current of 150 mA and a collector-emitter voltage rating of 50 V. With a power dissipation capacity of 200 mW and a transition frequency of 80 MHz, it is designed for audio frequency general-purpose amplifier applications. The component is housed in a US6 surface-mount package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and RoHS compliance status. Confirm that the requested part number matches the exact electrical specifications required for the design. Cross-reference the manufacturer's latest datasheet to validate current supply status and any potential obsolescence notices before finalizing procurement plans.
Select this component when a dual PNP transistor array is required for audio or general-purpose amplification. Ensure the design accommodates the 50 V collector-emitter voltage limit and 150 mA maximum current. Verify that the US6 package footprint aligns with the PCB layout constraints. Consider the 200 mW power dissipation rating for thermal management requirements in the target application environment.
This component belongs to the HN1B series of dual transistors from Toshiba Semiconductor. It shares similar architectural characteristics with other members like the HN1B01FU but differs in polarity and specific electrical parameters. The series is generally targeted at consumer electronics requiring compact, high-performance switching and amplification solutions in small surface-mount packages.
Publicly confirmed substitute part numbers are not available in the provided source material.