HN1C01FE-GR,LF

Overview

The HN1C01FE-GR,LF is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. The device features a collector-emitter voltage rating of 50V and a maximum continuous collector current of 150mA per element. Key electrical characteristics include a DC current gain (hFE) minimum of 120 at 2mA/6V and a transition frequency of 80MHz. The unit offers a maximum power dissipation of 300mW and operates within a junction temperature range up to 125°C, making it suitable for high-density digital switching applications.

Feature Summary

• Integrated dual NPN configuration with internal bias resistors simplifies circuit design
• High current handling capability supports direct driving of low-power loads
• Compact SOT-457 (SM6) footprint optimizes PCB space utilization

Applications

• Digital logic level shifting circuits
• General-purpose switching applications in consumer electronics
• Interface drivers for microcontroller output expansion

Procurement Notes

Verify the complete part number including the suffix GR(TE85L,F or similar) against official Toshiba documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors as availability may vary. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet prior to reflow soldering.

Selection Notes

Select this component when a dual NPN solution with integrated biasing is required to reduce external component count. Compare hFE linearity and saturation voltage requirements against alternative arrays if specific gain consistency is critical. Verify that the 80MHz transition frequency meets the switching speed demands of the target application without necessitating faster, higher-cost alternatives.

Part Context

This part belongs to Toshiba's HN1C series of pre-biased transistor arrays, designed to replace discrete resistor-transistor combinations. The HN1C01 variant specifically provides two NPN units, offering a cost-effective and space-saving alternative to individual BJT components in complex digital logic boards.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Toshiba's official cross-reference guides or distributor databases for equivalent dual NPN pre-biased arrays with matching pinouts and electrical ratings.